Viterbi Faculty of Electrical Engineering, Technion
Developing Building Blocks for Oxide Electronics
Complex oxides exhibit rich functionalities, such as ferromagnetism, ferroelctricity, superconductivity, memristive effects and metal-insulator transitions. Oxide electronics is an emerging field, aiming to harness these diverse physical phenomena towards practical devices. Implementation of these concepts relies on the development of basic device building blocks such as field-effect transistors (FETs), diodes and capacitors which are crucial components of integrated circuits. A major bottleneck toward implementing such devices is the development of efficient insulators, a critical component of many electronic devices. While in conventional semiconductors such as silicon, proper insulators are a decades-old art, when growing an insulator on top of an oxide conductor or semiconductor, the insulator properties of the junction are neither trivial nor guaranteed. In this work, a thorough analysis of currents through insulators is developed and implemented on Al2O3 and Ta2O5 which are two oxides that are intensely studied in recent years due to their promising applications in oxide electronics, such as in FETs, diodes, resistive switching devices and others. From the analysis, electrical properties such as energy band alignment and electron traps density are studied, the conduction mechanisms are pinpointed and their role in devices is discussed. A key outcome of this analysis is the proposal of design guidelines for future oxide-based devices. * MSc seminar under supervision of Prof. Lior Kornblum. .
תאריך: Mon 23 Sep 2019
Start Time: 14:30
End Time: 15:30
861 | Electrical Eng. Building