Caram Nasser


Viterbi Faculty of Electrical Engineering, Technion

Integration of device and circuit simulation of gallium nitride transistors

Gallium nitride (GaN) transistors are high performance devices for power switching and high frequency power applications. State-of-the-art GaN transistors outperform current silicon technologies due to the superior physical properties of this material. Yet, device optimization by simulations is not well establish, because several physical properties of the material are not sufficiently well known. In this talk, I will present our approach for technology computer aided design (TCAD) of GaN transistors. The physical parameter extraction flow and simulation methodology will be presented. Excellent agreement with the DC curves of the device, pulsed IV curves, and with small and large signal high frequency measurements was obtained. I will emphasize in this talk that using a small number of fitting parameters helps to apply the TCAD methodology to other devices with different semiconductor layer structures and geometries.   * MSc seminar under supervision of Prof. Dan Ritter.

Date: Tue 19 Feb 2019

Start Time: 12:30

End Time: 13:30

1061 | Electrical Eng. Building